Submit a Quote for Part 21049355-101 by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor with NSN 5962-01-358-4069
Part Number : 21049355-101
Alternate P/N : 21049355101
NSN : 5962-01-358-4069
NIIN : 013584069
Item Name : Microcircuit Memory
CAGE Code : 81395
Part number 21049355-101 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013584069. This part is manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 81395 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 21049355-101 by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 21049355-101 with NSN 5962-01-358-4069, 5962013584069
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-358-4069 Item Description: Microcircuit Memory | 5962 | 013584069 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 21049355-101 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-358-4069, 5962013584069
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-40 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN38 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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