Submit a Quote for Part 21049368-101 by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor with NSN 5962-01-358-5656
Part Number : 21049368-101
Alternate P/N : 21049368101
NSN : 5962-01-358-5656
NIIN : 013585656
Item Name : Microcircuit Memory
CAGE Code : 81395
Part number 21049368-101 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013585656. This part is manufactured by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 81395 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 21049368-101 by Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 21049368-101 with NSN 5962-01-358-5656, 5962013585656
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-358-5656 Item Description: Microcircuit Memory | 5962 | 013585656 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 21049368-101 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-358-5656, 5962013585656
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING650 0 MILLIWATTS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ERASABLE AND PROGRAMMED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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