Submit a Quote for Part 312242-001 by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-201-6827

Part Number : 312242-001

Alternate P/N : 312242001

NIIN : 012016827

Item Name : Microcircuit Memory

CAGE Code : 81413

Part number 312242-001 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962012016827. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 81413 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 312242-001 by Bae Systems Information And Electronic Systems Integration I. With more than 2 billion NSNs from 26 distinct federal supply codes.

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NSN Information for Part Number 312242-001 with NSN 5962-01-201-6827, 5962012016827

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-201-6827

Item Description:

Microcircuit Memory

59620120168270ND
CIICHCCESDPMICCriticalityENAC
7DA0
Part NumberISCRNVCRNCCHCCMSDSSADC
312242-001515

Characteristics Data of NSN 5962-01-201-6827, 5962012016827

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH1 280 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATIONRECEIVING SET ANALR56C
MEMORYCBBLFEATURES PROVIDEDBIPOLAR AND PROGRAMMABLE AND MONOLITHIC
MEMORYCQSJINCLOSURE MATERIALCERAMIC OR GLASS OR METAL
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN20 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES NOMINAL OUTPUT SINK
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCXCYPART NAME ASSIGNED BY CONTROLLING AGENCY20-INPUT 4-OUTPUT REGISTERED AND-OR GATE ARRAY
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 12 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEPAL
MEMORYTESTTEST DATA DOCUMENT14933-84129 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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