Submit a Quote for Part 330517-001 by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-359-0333
Part Number : 330517-001
Alternate P/N : 330517001
Manufacturer : Bae Systems Information And Electronic Systems Integration I
NSN : 5962-01-359-0333
NIIN : 013590333
Item Name : Microcircuit Memory
CAGE Code : 81413
Part number 330517-001 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013590333. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 81413 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 330517-001 by Bae Systems Information And Electronic Systems Integration I. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 330517-001 with NSN 5962-01-359-0333, 5962013590333
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-359-0333 Item Description: Microcircuit Memory | 5962 | 013590333 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 330517-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-359-0333, 5962013590333
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING385 0 MILLIWATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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