Submit a Quote for Part 1372FW1063-001 by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-372-6629
Part Number : 1372FW1063-001
Alternate P/N : 1372FW1063001
Manufacturer : Bae Systems Information And Electronic Systems Integration I
NSN : 5962-01-372-6629
NIIN : 013726629
Item Name : Microcircuit Memory
CAGE Code : 72314
Part number 1372FW1063-001 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013726629. This part is manufactured by Bae Systems Information And Electronic Systems Integration I. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 72314 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 1372FW1063-001 by Bae Systems Information And Electronic Systems Integration I. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 1372FW1063-001 with NSN 5962-01-372-6629, 5962013726629
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-372-6629 Item Description: Microcircuit Memory | 5962 | 013726629 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 1372fw1063-001 | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-372-6629, 5962013726629
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 260 INCHES MINIMUM AND 1 280 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC25 00 NANOSECONDS AF OUTPUT MEGAWATTS |
| MEMORY | FEAT | SPECIAL FEATURESESD CHECKSUM D0EE FILENAME1062U15 JED ALTERED ITEM USING 6726859628753901LX |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-87539 GOVERNMENT STANDARD |
| MEMORY | ADAU | BODY HEIGHT0 290 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | AGAV | END ITEM IDENTIFICATIONEOLOROPS |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROGRAMMED |
| MEMORY | ADAT | BODY WIDTH0 180 INCHES MINIMUM AND 0 200 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 2 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND BURN IN MIL-STD-883 CLASS B AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND PROGRAMMED |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC0 5 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
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