Submit a Quote for Part Z1628CV01 by Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-217-0602
Part Number : Z1628CV01
NSN : 5962-01-217-0602
NIIN : 012170602
Item Name : Microcircuit Memory
CAGE Code : 94117
Part number Z1628CV01 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962012170602. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 94117 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of Z1628CV01 by Bae Systems Information And Electronic Systems Integration Inc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number Z1628CV01 with NSN 5962-01-217-0602, 5962012170602
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-217-0602 Item Description: Microcircuit Memory | 5962 | 012170602 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Z1628cv01 | 2 | 1 | 5 |
Characteristics Data of NSN 5962-01-217-0602, 5962012170602
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 790 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 155 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE0 0 TO 75 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN9 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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