Submit a Quote for Part G8509.B01 by Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-240-6660
Part Number : G8509.B01
Alternate P/N : G8509B01
NSN : 5962-01-240-6660
NIIN : 012406660
Item Name : Microcircuit Memory
CAGE Code : 94117
Part number G8509.B01 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962012406660. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 94117 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of G8509.B01 by Bae Systems Information And Electronic Systems Integration Inc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number G8509.B01 with NSN 5962-01-240-6660, 5962012406660
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-240-6660 Item Description: Microcircuit Memory | 5962 | 012406660 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| G8509.B01 | 2 | 1 | 5 |
Characteristics Data of NSN 5962-01-240-6660, 5962012406660
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 760 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES NOMINAL |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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