Submit a Quote for Part 9931-BDMN by Bae Systems Operations Limited Dba Bae Systems Plc with NSN 5962-01-293-0144
Part Number : 9931-BDMN
Alternate P/N : 9931BDMN
Manufacturer : Bae Systems Operations Limited Dba Bae Systems Plc
NSN : 5962-01-293-0144
NIIN : 012930144
Item Name : Microcircuit Memory
CAGE Code : K0656
Part number 9931-BDMN is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962012930144. This part is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as K0656 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 9931-BDMN by Bae Systems Operations Limited Dba Bae Systems Plc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 9931-BDMN with NSN 5962-01-293-0144, 5962012930144
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-293-0144 Item Description: Microcircuit Memory | 5962 | 012930144 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 9931-Bdmn | 2 | 2 | 3 |
Characteristics Data of NSN 5962-01-293-0144, 5962012930144
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 280 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH PERFORMANCE AND WCLOCK AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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