Submit a Quote for Part 9966-CDJY by Bae Systems Operations Limited Dba Bae Systems Plc with NSN 5962-01-331-7107
Part Number : 9966-CDJY
Alternate P/N : 9966CDJY
Manufacturer : Bae Systems Operations Limited Dba Bae Systems Plc
NSN : 5962-01-331-7107
NIIN : 013317107
Item Name : Microcircuit Memory
CAGE Code : K0656
Part number 9966-CDJY is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013317107. This part is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as K0656 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 9966-CDJY by Bae Systems Operations Limited Dba Bae Systems Plc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 9966-CDJY with NSN 5962-01-331-7107, 5962013317107
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-331-7107 Item Description: Microcircuit Memory | 5962 | 013317107 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
9966-Cdjy | 5 | 2 | 5 |
Characteristics Data of NSN 5962-01-331-7107, 5962013317107
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND WACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | ADAU | BODY HEIGHT0 165 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | ABKW | OVERALL HEIGHT0 425 INCHES MAXIMUM |
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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