Submit a Quote for Part 9986-CCRN by Bae Systems Operations Limited Dba Bae Systems Plc with NSN 5962-01-364-9372
Part Number : 9986-CCRN
Alternate P/N : 9986CCRN
Manufacturer : Bae Systems Operations Limited Dba Bae Systems Plc
NSN : 5962-01-364-9372
NIIN : 013649372
Item Name : Microcircuit Memory
CAGE Code : K0656
Part number 9986-CCRN is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013649372. This part is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as K0656 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 9986-CCRN by Bae Systems Operations Limited Dba Bae Systems Plc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 9986-CCRN with NSN 5962-01-364-9372, 5962013649372
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-364-9372 Item Description: Microcircuit Memory | 5962 | 013649372 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 9986-Ccrn | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-364-9372, 5962013649372
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING2 0 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMED |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL |
| MEMORY | CZER | MEMORY DEVICE TYPEPAL |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY16-INPUT 6-OUTPUT REGISTERED AND-OR GATE ARRAY |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM ABSOLUTE INPUT AND 12 0 VOLTS MAXIMUM ABSOLUTE INPUT |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONSCADC EI FSCM K0656 |
| MEMORY | CQWX | OUTPUT LOGIC FORMBIPOLAR METAL-OXIDE SEMICONDUCTOR |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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