Submit a Quote for Part 9986-CCRM by Bae Systems Operations Limited Dba Bae Systems Plc with NSN 5962-01-365-1425
Part Number : 9986-CCRM
Alternate P/N : 9986CCRM
Manufacturer : Bae Systems Operations Limited Dba Bae Systems Plc
NSN : 5962-01-365-1425
NIIN : 013651425
Item Name : Microcircuit Memory
CAGE Code : K0656
Part number 9986-CCRM is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013651425. This part is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as K0656 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of 9986-CCRM by Bae Systems Operations Limited Dba Bae Systems Plc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number 9986-CCRM with NSN 5962-01-365-1425, 5962013651425
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-365-1425 Item Description: Microcircuit Memory | 5962 | 013651425 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
9986-Ccrm | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-365-1425, 5962013651425
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AGAV | END ITEM IDENTIFICATIONSCADC EI FSCM K0656 |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 0 VOLTS MINIMUM ABSOLUTE INPUT AND 22 0 VOLTS MAXIMUM ABSOLUTE INPUT |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN20 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYPROGRAMMED DEVICE PAL |
MEMORY | TEST | TEST DATA DOCUMENTK0656-9986-CCRM DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DR |
MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA96906-MIL-STD-883 GOVERNMENT STANDARD |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMED |
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