Submit a Quote for Part IDT6116LA120DB by Integrated Device Technology Inc with NSN 5962-01-177-5400
Part Number : IDT6116LA120DB
Manufacturer : Integrated Device Technology Inc
NSN : 5962-01-177-5400
NIIN : 011775400
Item Name : Microcircuit Memory
CAGE Code : 61772
Part number IDT6116LA120DB is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962011775400. This part is manufactured by Integrated Device Technology Inc. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 61772 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of IDT6116LA120DB by Integrated Device Technology Inc. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number IDT6116LA120DB with NSN 5962-01-177-5400, 5962011775400
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-177-5400 Item Description: Microcircuit Memory | 5962 | 011775400 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Idt6116la120db | 3 | 2 | 5 |
Characteristics Data of NSN 5962-01-177-5400, 5962011775400
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | AN/GPN-22(V) RADAR DATA TRANSFER,SUBSYSTEM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION AND W/ENABLE AND BIDIRECTIONAL |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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