Submit a Quote for Part SMJ2114-25JDM by Texas Instruments Incorporated with NSN 5962-01-206-9467
Part Number : SMJ2114-25JDM
Alternate P/N : SMJ211425JDM
Manufacturer : Texas Instruments Incorporated
NSN : 5962-01-206-9467
NIIN : 012069467
Item Name : Microcircuit Memory
CAGE Code : 01295
Part number SMJ2114-25JDM is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962012069467. This part is manufactured by Texas Instruments Incorporated. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 01295 ? Fill out the form to get started. All fields marked with an asterisk (*) must be carefully and completely filled out. Please make sure that you enter Need Parts By and Quantity (ea) correctly before submitting the form as they determine the bulk of your quote. One of our experts will respond within 15 minutes on the basis of answers entered in these fields. Accelerating RFQs is owned and operated by ASAP Semiconductor, one of the industry’s top supplier of SMJ2114-25JDM by Texas Instruments Incorporated. With more than 2 billion NSNs from 26 distinct federal supply codes.
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NSN Information for Part Number SMJ2114-25JDM with NSN 5962-01-206-9467, 5962012069467
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-206-9467 Item Description: Microcircuit Memory | 5962 | 012069467 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Smj2114-25jdm | 2 | 2 | 5 |
Characteristics Data of NSN 5962-01-206-9467, 5962012069467
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.890 INCHES MINIMUM AND 0.910 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.280 INCHES MINIMUM AND 0.305 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.085 INCHES MINIMUM AND 0.115 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -55.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND STATIC OPERATION AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 15 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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