0117952-1 by Manufacturer Navy United States Department Of with NSN 5962-01-340-9354 - Submit a Quote
Part Number : 0117952-1
Alternate P/N : 01179521
Manufacturer : Navy United States Department Of
NSN : 5962-01-340-9354
NIIN : 013409354
Item Name : Microcircuit Memory
CAGE Code : 55910
Part number 0117952-1 is now available in our ready-to-ship NSN parts inventory. The unique NSN for this part is 5962013409354. This part is manufactured by Navy United States Department Of. Would you like to receive a quick quote for the part having description as Microcircuit Memory and Cage Code as 55910 ? Fill out the form to get started.
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NSN Information for Part Number 0117952-1 with NSN 5962-01-340-9354, 5962013409354
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-340-9354 Item Description: Microcircuit Memory | 5962 | 013409354 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
0117952-1 | 2 | 2 | 3 |
Characteristics Data of NSN 5962-01-340-9354, 5962013409354
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC25 00 INPUT ENGINE CRANKCASE OIL-BIOPREFERRED MAXIMUM |
MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC13 0 VOLTS MAXIMUM INPUT |
MEMORY | CZER | MEMORY DEVICE TYPECROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ABKW | OVERALL HEIGHT0 425 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONCOMBINER-DEMODULATOR MD-900ASSR-1 |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND MONOLITHIC |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQZP | INPUT CIRCUIT PATTERN34 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-5 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC40 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCONTROLLER WITH 4K BYTES EPROM MEMORY |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC312 00 NANOSECONDS MAXIMUM INPUT |
MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
MEMORY | CRHL | BIT QUANTITY8 |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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